VS-HFA30PB120HN3 www.vishay.com vishay semiconductors revision: 14-jul-15 1 document number: 94372 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 30 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? aec-q101 qualified, meets jesd 201 class 1a whisker test ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa30pb120... is a state of the art center tap ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basic ratings of 1200 v and 30 a continuous current, the vs-hfa30pb120... is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred vs-hfa30pb120... is ideally suited for applications in power supp lies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-247ac modified (2 pins) i f(av) 30 a v r 1200 v v f at i f 2.3 v t rr typ. 47 ns t j max. 150 c diode variation single die 1 2 3 to-247ac mo d i?e d base common cathode 2 13 anode cathode absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 30 a single pulse forward current i fsm 120 maximum repetitive forward current i frm 90 maximum power dissipation p d t c = 25 c 350 w t c = 100 c 140 operating junction and storage temperature range t j , t stg -55 to +150 c
VS-HFA30PB120HN3 www.vishay.com vishay semiconductors revision: 14-jul-15 2 document number: 94372 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units cathode to anode breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 30 a see fig. 1 -2.44.1 i f = 60 a - 3.1 5.7 i f = 30 a, t j = 125 c - 2.3 4.0 maximum reverse leakage current i rm v r = v r rated see fig. 2 -1.340 a t j = 125 c, v r = 0.8 x v r rated - 1100 4000 junction capacitance c t v r = 200 v see fig. 3 - 50 75 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time see fig. 5, 10 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 47 - ns t rr1 t j = 25 c i f = 30 a di f /dt = 200 a/s v r = 200 v - 110 170 t rr2 t j = 125 c - 170 260 peak recovery current see fig. 6 i rrm1 t j = 25 c - 10 15 a i rrm2 t j = 125 c - 16 24 reverse recovery charge see fig. 7 q rr1 t j = 25 c - 650 980 nc q rr2 t j = 125 c - 1540 2310 peak rate of fa ll of recovery current during t b see fig. 8 di (rec)m /dt1 t j = 25 c - 270 - a/s di (rec)m /dt2 t j = 125 c - 240 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, junction to case r thjc - - 0.36 c/w thermal resistance, junction to ambient r thja typical socket mount - - 80 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.50 - weight - 5.61 - g - 0.198 - oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247 ac modified (jedec) hfa30pb120h
VS-HFA30PB120HN3 www.vishay.com vishay semiconductors revision: 14-jul-15 3 document number: 94372 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v f - forward voltage drop (v) 12345678 1 100 10 t j = 150 c t j = 125 c t j = 25 c v r - reverse voltage (v) i r - reverse current (ma) 0 200 400 600 800 1000 1200 0.0001 0.001 0.01 0.1 1 10 100 150 c 25 c 125 c 100 1 100 1000 v r - reverse voltage (v) c t - junction capacitance (pf) 10 10 1000 t j = 25 c 0.01 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal response 0.001 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 single pulse (thermal response) 0.234 0.069 0.056 0.000100 0.000434 0.002202 ri (c/w) i (s) 1 j r 1 r 2 r 3 c 2 3 ci = i/ri notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-HFA30PB120HN3 www.vishay.com vishay semiconductors revision: 14-jul-15 4 document number: 94372 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt(per leg) fig. 9 - reverse recovery parameter test circuit 0 100 150 di f /dt (a/s) t rr (ns) 25 75 50 100 125 150 175 200 225 250 275 300 200 250 300 350 400 450 500 i f = 60 a i f = 30 a i f = 15 a v r = 200 v t j = 125 c t j = 25 c 0 100 150 di f /dt (a/s) i rrm (a) 5 15 10 20 25 30 35 200 250 300 350 400 450 500 i f = 60 a i f = 30 a i f = 15 a v r = 200 v t j = 125 c t j = 25 c 0 100 200 di f /dt (a/s) q rr (nc) 500 1500 1000 2000 2500 3000 300 400 500 i f = 60 a i f = 30 a i f = 15 a v r = 200 v t j = 125 c t j = 25 c 100 100 150 di f /dt (a/s) 900 0 200 300 400 500 600 700 800 200 250 300 350 400 450 500 di (rec)m /dt (a/s) v r = 200 v t j = 125 c t j = 25 c i f = 15 a i f = 30 a i f = 60 a irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t
VS-HFA30PB120HN3 www.vishay.com vishay semiconductors revision: 14-jul-15 5 document number: 94372 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - reverse recovery waveform and definitions ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-HFA30PB120HN3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95253 part marking information www.vishay.com/doc?95442 spice model www.vishay.com/doc?95358 q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr 1 - vishay semiconductors product 2 - hexfred ? family 3 - electron irradiated 4 - current rating (30 = 30 a) 5 - pb = to-247ac modified device code 5 1 3 2 4 6 7 hf vs- a 30 pb 120 h 6 7 - voltage rating: (120 = 1200 v) - environmental digit: -n3 = halogen-free, rohs-compliant, and totally lead (pb)-free n3 8 8 - h = aec-q101 qualified
outline dimensions www.vishay.com vishay semiconductors revision: 07-apr-15 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247 modified dimensions in millimeters and inches notes (1) dimensioning and tolerance per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish unc ontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jedec ? outline to-247 with exception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 ? p1 - 6.98 - 0.275 c1 0.38 0.84 0.015 0.033 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) ? p (datum b) ? p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) plating 0.10 a c m m ? k b d m m
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